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Multi color active regions for white light emitting diode (патент US № 8314429)

Официальная публикация
патента US № 8314429

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Патентный поиск по классам МПК-8:

Класс H01L31/0256 ..отличающиеся материалом кристалла


Классы МПК:H01L31/0256 ..отличающиеся материалом кристалла
Автор(ы):Raring, James (Goleta, CA, US)
Sharma, Rajat (Goleta, CA, US)
Poblenz, Christiane (Goleta, CA, US)
Патентообладатель(и):Soraa, Inc. (Fremont, CA, US)
Приоритеты:
подача заявки
13.09.2010
публикация патента
20.11.2012

РЕФЕРАТ (Abstract)

A light emitting diode device has a gallium and nitrogen containing substrate with a surface region with an epitaxial layer overlying the surface region. Preferably the device includes a first active region overlying the surface and configured to emit first electromagnetic radiation having a wavelength ranging from about 405 nm to 490 nm; a second active region overlying the surface and configured to emit second electromagnetic radiation having a wavelength ranging from about 491 nm to about 590 nm; and a third region overlying the surface region and configured to emit third electromagnetic radiation having a wavelength ranging from about 591 nm to about 700 nm. A p-type epitaxial layer covers the first, second, and third active regions.

ФОРМУЛА ИЗОБРЕТЕНИЯ (CLAIMS)

What is claimed is:

1. A light emitting diode device comprising: a gallium and nitrogen containing substrate having a surface region; an n-type epitaxial layer overlying the surface region; at least one first active region overlying at least one portion of the surface region and being configured to first emit electromagnetic radiation having a wavelength ranging from about 405 nm to 490 nm; at least one second active region overlying at least one portion of the surface region and being configured to second emit electromagnetic radiation having a wavelength ranging from about 520 nm to about 620 nm, the at least one second active regions being positioned above the at least one first active regions; a p-type epitaxial layer overlying the at least one first and second active regions; and a barrier layer positioned between the first active region and the second active region.

2. The device of claim 1 wherein the barrier layer comprises magnesium material.

3. The device of claim 1, wherein the at least one first active region comprises a first indium containing material.

4. The device of claim 1, wherein the at least one second active region comprises a second indium containing material.

5. The device of claim 1, wherein the first electromagnetic radiation is characterized by a blue color and the second electromagnetic radiation is characterized by a yellow color.

6. The device of claim 1, wherein the at least one first active region and the at least one second active region are configured in a stacked configuration.

7. The device of claim 1, wherein the first electromagnetic radiation and the second electromagnetic radiation combine to form substantially white light.

8. The device of claim 1, wherein the surface region is oriented in a polar configuration.

9. The device of claim 1, wherein the surface region is oriented in a non-polar configuration.

10. The device of claim 1, wherein the surface region is oriented in a semi-polar configuration.

11. The device of claim 1, comprising at least one third region overlying at least one portion of the surface region and being configured to emit third electromagnetic radiation having a wavelength ranging from about 591 nm to about 700 nm.

12. The device of claim 11, wherein the at least one third active region comprise third indium containing material.

13. The device of claim 11, wherein the at least one first active region, the at least one second active region, and the at least one third active region are configured in a stacked configuration.

14. The device of claim 11, wherein the first electromagnetic radiation, the second electromagnetic radiation, and third electromagnetic radiation combine to emit substantially white light.

15. The device of claim 1, further comprising at least one tunnel junction region between the at least one first and the at least one second active region.

16. The device of claim 11, further comprising at least one tunnel junction region between the at least one second and the at least one third active region.


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