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Gallium nitride substrate


Классы МПК:H01L29/20 содержащие, кроме легирующих материалов и других примесей, только соединения типа AIIIBV
Автор(ы): Hachigo, Akihiro (Itami, JP)
Патентообладатель(и): Sumitomo Electric Industries, Ltd. (Osaka-shi, Osaka, JP)
Приоритеты:
подача заявки
27.05.2010
публикация патента
22.05.2012

РЕФЕРАТ (Abstract)

A gallium nitride substrate comprising a primary surface, the primary surface being tilted at an angle in a range of 20 to 160 degrees with respect to a C-plane of the substrate, and the substrate having a fracture toughness of more than or equal to 1.36 MN/m3/2.
Полный текст Патента US 8183668 + PDF


ФОРМУЛА ИЗОБРЕТЕНИЯ (CLAIMS)

What is claimed is:

1. A gallium nitride substrate comprising a primary surface, the primary surface being tilted at an angle in a range of 20 to 160 degrees with respect to a C-plane of the substrate, and the substrate having a fracture toughness of more than or equal to 1.36 MN/m3/2, further comprising a cleaved surface that extends in a direction perpendicular to a [11-20] direction.

2. The gallium nitride substrate according to claim 1, wherein the primary surface is tilted in a [1-100] direction of the substrate.

3. The gallium nitride substrate according to claim 2, wherein the primary surface has a longitudinal direction being a [11-20] direction of the substrate and a transverse direction perpendicular to the [11-20] direction.

4. The gallium nitride substrate according to claim 2, wherein the angle between the primary surface and the C-plane is in a range of 71 to 79 degrees.

5. A gallium nitride substrate comprising a primary surface, the primary surface being tilted at an angle in a range of 20 to 160 degrees with respect to a C-plane of the substrate, the substrate having a fracture toughness of more than or equal to 1.36 MN/m3/2, the primary surface having a longitudinal direction and a transverse direction, the longitudinal direction being a [11-20] direction of the substrate, and the transverse direction being perpendicular to the [11-20] direction further comprising a cleaved surface that extends in a direction perpendicular to a [11-20] direction.

6. The gallium nitride substrate according to claim 5, wherein the angle between the primary surface and the C-plane is in a range of 71 to 79 degrees.

7. A gallium nitride substrate comprising a primary surface, the primary surface being tilted at an angle in a range of 71 to 79 degrees with respect to a C-plane of the substrate, the substrate having a fracture toughness of more than or equal to 1.36 MN/m3/2, further comprising a cleaved surface that extends in a direction perpendicular to a [11-20] direction.

8. A gallium nitride substrate comprising a primary surface and a cleaved surface that extends in a direction perpendicular to the [11-20] direction, the primary surface being tilted at an angle in a range of 20 to 160 degrees with respect to a C-plane of the substrate, the substrate having a fracture toughness of more than or equal to 1.36 MN/m3/2.

9. A gallium nitride substrate comprising a primary surface, the primary surface being tilted at an angle in a range of 71 to 79 degrees with respect to a C-plane of the substrate, and the substrate having a fracture toughness of more than or equal to 1.36 MN/m3/2, the primary surface having a longitudinal direction and a transverse direction, the longitudinal direction being a [11-20] direction of the substrate, and the transverse direction being perpendicular to the [11-20]direction, further comprising a cleaved surface that extends in a direction perpendicular to a [11-20] direction.


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